| Autor: |
Shelly Garg, Sneh Saurabh |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 435-443 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2907314 |
| Popis: |
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT). In this paper, we propose a technique to suppress direct source-to-drain BTBT by increasing the effective distance between the source and the drain. We propose to add a ground plane (GP) in the buried oxide of a silicon-on-insulator (SOI) TFET which depletes the drain and increases the effective source-to-drain distance. Using 2-D device simulations it is shown that the introduction of the ground plane is effective in reducing OFF-state current and ambipolar current, as well as, in improving the average subthreshold swing for the small channel length SOI-TFETs. Additionally, the addition of GP is helpful in ameliorating the short-channel effects, such as drain-induced barrier lowering and threshold voltage roll-off. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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