| Popis: |
In this study, we employed a solid-state reaction method to synthesize Ca _0.25 Cu _0.75-x Al _x TiO _3 ceramics, investigating the impact of Al doping at concentrations of x = 0 and 0.0125. Notably, all ceramics exhibited a primary phase of Ca _0.25 Cu _0.75 TiO _3 . The addition of Al ^3+ induced a significant increase in grain size. Density functional theory analyses revealed a preferential occupation of Cu sites by Al, leading to liquid-phase sintering processes attributed to excess Cu. Moreover, it was also found from DFT that the Al dopant cannot induce an oxygen vacancy in the lattice. Charge density analysis revealed that Cu ^+ and Ti ^3+ observed via XPS originate from the presence of an oxygen vacancy. The Ca _0.25 Cu _0.7375 Al _0.0125 TiO _3 ceramic exhibited a very high dielectric permittivity of 9.23 × 10 ^4 and a low dielectric loss tangent of 0.057 at 1 kHz and room temperature. Importantly, the dielectric permittivity exhibited impressive stability over a temperature range of −60 °C to 110 °C, perfectly meeting the practical requirements for utilization in X5R ceramic capacitors. Our investigation indicates that the improved dielectric properties may be attributed to enhanced grain boundary responses, influenced by oxygen enrichment and the presence of metastable insulating layers at grain boundaries. Combining experimental findings with theoretical evidence, our study elucidates that the excellent dielectric properties of the Ca _0.25 Cu _0.7375 Al _0.0125 TiO _3 ceramic originate from an extrinsic effect arising from grain boundary enhancement. This work not only contributes to advancing the understanding of the underlying mechanisms governing dielectric behavior in doped ceramics, but also emphasizes the potential of Ca _0.25 Cu _0.7375 Al _0.0125 TiO _3 as a promising material for applications demanding superior dielectric performance. |
