| Autor: |
Babak Kazemi Esfeh, Martin Rack, Sergej Makovejev, Frederic Allibert, Jean-Pierre Raskin |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 543-550 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2805780 |
| Popis: |
This paper evaluates the small-and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation, and nonlinear behavior. It is fabricated on three different types of high resistivity (HR) silicon-on-insulator (SOI) substrates: one standard (HRSOI) and two trap-rich (RFeSI80 and RFeSI90). Using a special test structure, the contribution of substrate and active devices is separated for both in small-and large-signal. It is shown that by using trap-rich substrate technology, a reduction of over 16 dB of 2nd harmonic is achieved compared with HR SOI substrate. In off-state, it is shown that 35 dB increase of harmonic level is due to the nonlinearity of active devices. The effect of body bias on small-and large-signal FoMs of the SPDT is investigated and discussed. It is illustrated that trap-rich HR-SOI substrates having much thinner BOX, still outperform classical HR-SOI wafer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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