Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction

Autor: Shulun Li, Xiangjun Shang, Yao Chen, Xiangbin Su, Huiming Hao, Hanqing Liu, Yu Zhang, Haiqiao Ni, Zhichuan Niu
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nanomaterials, Vol 11, Iss 5, p 1136 (2021)
Druh dokumentu: article
ISSN: 2079-4991
DOI: 10.3390/nano11051136
Popis: Uniform arrays of three shapes (gauss, hat, and peak) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (λ: 890–990 nm) and broadband (Δλ∼80 nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the hat-shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of 7×106 counts per second at the first lens; while the gauss-shaped ML shows a broader band (e.g., longer λ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability g(2)(0)=0.02; some QDs show both biexciton XX and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.
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