577-nm high-power optically pumped semiconductor laser is safe and effective in the treatment of inflammatory acne: a prospective, single-center, split-face comparative study

Autor: E. M. Mohamed, K. M. Tawfik, I. B. Elsayed, E. Bölke, P. A. Gerber
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: European Journal of Medical Research, Vol 26, Iss 1, Pp 1-5 (2021)
Druh dokumentu: article
ISSN: 2047-783X
DOI: 10.1186/s40001-021-00573-z
Popis: Abstract Objective This study aimed to appraise the efficacy of a 577-nm high-power optically pumped semiconductor laser (HOPSL) for the treatment of inflammatory acne. Methods The study included 50 patients with acne vulgaris (inflammatory type), 14 men, and 36 women; patient ages ranged from 16 to 35 years. The left side of the face was treated with a single pass of a 577-nm high-power optically pumped semiconductor laser (HOPSL) every 2 weeks for 3 sessions. The severity of acne examined prior to the first session and 4 weeks after the last session (Investigator's Global Assessment of acne severity, IGA; single lesion count). Results At baseline, no statistically significant difference in the severity of inflammatory acne lesions between both sides was observed. One month after the final session, a significant improvement (IGA reduction of > 50%) of the overall severity of acne was observed in 49 patients (98%) on the laser-treated side versus 41 (82%) the control side of the face (P
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