| Autor: |
A. Razavieh, Y. Chen, T. Ethirajan, M. Gu, S. Cimino, T. Shimizu, M. K. Hassan, T. Morshed, J. Singh, W. Zheng, V. Mahajan, H. T. Wang, T. H. Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 165-169 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2020.3046953 |
| Popis: |
An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform. With the $V_{TH}\approx 100$ mV ELVT FinFET shows 15% $I_{EFF}$ improvement at the same $V_{DD}$ compared to its super-low threshold voltage (SLVT) counterpart, while mismatch and reliability performances are comparable. $F_{T}/F_{MAX}$ of ~305GHz/~315GHz and comparable Maximum Stable Gain (MSG) to SLVT FinFET gives ELVT FinFET an advantage for mmWave 5G low-power applications. Local oscillator (LO) chain blocks are investigated as a circuit level example to confirm the benefits of ELVT FinFET. An optimized LO transmission Line (TL) driver using ELVT FinFETs results in ~9% and ~8% reduction in $V_{DD}$ and power consumption respectively at the same phase-noise (PN) level as the SLVT based design. If operated at the same $V_{DD}$ of 0.525V ELVT FinFET can improve the VCO Figure of Merit ( $FOM_{VCO}$ ) by ~2.8dB. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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