Influence of microwave radiation on relaxation processes in silicon carbide

Autor:	Yu.Yu. Bacherikov, V.Yu. Goroneskul, O.Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	microwave radiation relaxation processes silicon carbide optical absorption spectroscopy high-resolution diffractometry Physics QC1-999
Zdroj:	Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 175-179 (2020)
Druh dokumentu:	article
ISSN:	1560-8034 1605-6582
DOI:	10.15407/spqeo23.02.175
Popis:	The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to redistribution of recombination centers in the sample.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/7a9feb33b2284a698b72029423d3ef06 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF