Utilization of MOSFET transistor as an electronic load to trace I-V and P-V curve of a solar panel

Autor: Asbayou Abdellah, Agdam Mohamed, Aamoume Amine, Soussi Ahmed, Ihla Ahmed, Bouhouch Lahoussine
Jazyk: English<br />French
Rok vydání: 2021
Předmět:
Zdroj: E3S Web of Conferences, Vol 229, p 01021 (2021)
Druh dokumentu: article
ISSN: 2267-1242
DOI: 10.1051/e3sconf/202122901021
Popis: To understand the electrical behavior of a photovoltaic panel, it is necessary to know the characteristic Ipv = f(Vpv). The best way to obtainthis I-V curve is to use a variable resistor. This paper proposes a new and simple technique based on a MOSFET transistor as a variable load, which whose gate voltage is controlled by an RC filter from the Arduino. A comparison under standard temperature and illumination conditions between the manufacturer’s datasheet with the simulation by MATLAB/Simulink on the one hand, and on the other hand between the manufacturer’s datasheet with the experimental data for the evaluation of this technique that has been performed.
Databáze: Directory of Open Access Journals