Design and Analysis of New Level Shifter With Gate Driver for Li-Ion Battery Charger in 180nm CMOS Technology

Autor:	M. El Alaoui, F. Farah, K. El Khadiri, H. Qjidaa, A. Aarab, A. Lakhssassi, A. Tahiri
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	li-ion battery charger level shifter gate driver propagation delay. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Iranian Journal of Electrical and Electronic Engineering, Vol 15, Iss 4, Pp 477-484 (2019)
Druh dokumentu:	article
ISSN:	1735-2827 2383-3890
Popis:	In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with gate driver achieves a propagation delay of less than 0.25ns and the total area is only 0.05mm2. The proposed level shifter with gate driver was designed, simulated and layouted in Cadence using TSMC 180nm CMOS technology.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/789441108deb453da2984f8dee2ea99c Zobrazit plný text záznamu View record in DOAJ