| Autor: |
N.P. VASSEL, S.G. KUREN, S.S. VASSEL, I.V. PAVLOVA |
| Jazyk: |
ruština |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Advanced Engineering Research, Vol 9, Iss 3, Pp 497-503 (2009) |
| Druh dokumentu: |
article |
| ISSN: |
2687-1653 |
| Popis: |
Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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