Crystallographic Orientation and Strain in GaN Crystals Grown on 6H-SiC and Sapphire Substrates
| Autor: | Yongliang Shao, Haixiao Hu, Baoguo Zhang, Xiaopeng Hao, Yongzhong Wu |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Crystals, Vol 13, Iss 12, p 1694 (2023) |
| Druh dokumentu: | article |
| ISSN: | 2073-4352 86666304 |
| DOI: | 10.3390/cryst13121694 |
| Popis: | The crystallographic-orientation relationship between GaN crystals grown via hydride vapor phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron backscatter diffraction (EBSD) Kikuchi diffraction patterns and pole figures to identify this relationship and calculate lattice mismatches. Comparing the misorientation of GaN crystals on different substrates along the growth direction using EBSD mapping, we identify the strain in GaN based on crystallographic-orientation results. Raman spectroscopy results correlate residual stress in GaN with lattice mismatches, aligning with our previous works. Residual stress of GaN on different substrates identified using PL spectrum also confirmed these results. The HRXRD characterized the dislocation density of GaN crystals grown on these substrates. |
| Databáze: | Directory of Open Access Journals |
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