| Autor: |
Fabien C.-P. Massabuau, Peter H. Griffin, Helen P. Springbett, Yingjun Liu, R. Vasant Kumar, Tongtong Zhu, Rachel A. Oliver |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 8, Iss 3, Pp 031115-031115-5 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.5142491 |
| Popis: |
Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the realization of complex three-dimensional porous nanostructures, potentially offering a wide range of functionalities, such as in-distributed Bragg reflectors. Porous/non-porous multilayers can be formed by etching the whole, as-grown wafers uniformly in one simple process, without any additional processing steps. The etch penetrates from the top down through the undoped layers, leaving them almost untouched. Here, atomic-resolution electron microscopy is used to show that the etchant accesses the doped layers via nanometer-scale channels that form at dislocation cores and transport the etchant and etch products to and from the doped layer, respectively. Results on AlGaN and non-polar GaN multilayers indicate that the same mechanism is operating, suggesting that this approach may be applicable in a range of materials. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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