Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Autor: Jo Masafumi, Duan Guotao, Mano Takaaki, Sakoda Kazuaki
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 76 (2011)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
Popis: Abstract We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.
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