| Autor: |
A. H. Sohrabi, N. V. Gaponenko, M. V. Rudenko, S. M. Zavadski, D. A. Golosov, B. S. Kolosnitsin, V. V. Kolos, A. N. Pyatlitski, A. S. Turtsevich |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 10-15 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
The strontium titanate thin films were fabricated on silicon using the sol-gel method. The strontium titanate phase was registered with X-ray diffraction analysis after heat treatment in the temperature range 750-1000 °C. The films were deposited by spin-on technique and the film thickness was in the range of 90-250 nm depending on numbers of layer. The perspectives of developments of the sol-gel method for the formation of elements of electronic device as well as varistors and capacitors on the basis of SrTiO3 xerogels are discussed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
