Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

Autor:	M. De La Bardonnie, P. Mialhe, E. Bendada, E. Blampain, A. Hoffmann, J.-P. Charles
Jazyk:	angličtina
Rok vydání:	1998
Předmět:	drain-substrate diode intrinsic parameters current-voltage characteristics. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 20, Iss 3, Pp 157-163 (1998)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/1998/54921
Popis:	The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on these dimensions.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/61727e0585b84972a5107f2ce7a75973 Zobrazit plný text záznamu Plný text View record in DOAJ