Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer
| Autor: | Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang, Edward Yi Chang |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | International Journal of Photoenergy, Vol 2017 (2017) |
| Druh dokumentu: | article |
| ISSN: | 1110-662X 1687-529X |
| DOI: | 10.1155/2017/9503857 |
| Popis: | In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780°C, a growth time of 5 min, and with N2/O2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750°C, growth time of 20 min, and under pure N2 gas environment. Carrier lifetime was increased to 15.45 μs, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells. |
| Databáze: | Directory of Open Access Journals |
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