| Autor: |
Zhenjun Zhang, Fan Yang, Pratik Agnihotri, Ji Ung Lee, J. R. Lloyd |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 6, Iss 2, Pp 025301-025301-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4941572 |
| Popis: |
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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