| Autor: |
Xu-Chen Nie, Hai-Yun Liu, Xiu Zhang, Cong-Ying Jiang, Shi-Zhong Zhao, Quan-Ping Zhao, Fan Li, Lili Yue, Jian-Qiao Meng, Yu-Xia Duan, Shi-Bing Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Results in Physics, Vol 12, Iss , Pp 1089-1090 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2018.12.094 |
| Popis: |
We present the study of the ultrafast carrier dynamics in bulk GaAs at 6 K, by time-resolved optical reflectivity in a wide range of excitation densities. We observe an exciton-phonon interaction at low excitation densities, in terms of a mono-exponential relaxation. Further increase of excitation density above a critical value nc, stimulates a bi-exponential relaxation in which the fast one is added owing to an exciton-exciton scattering channel. Our results reveal nc∼2×1024photons/m3, about an order of magnitude higher than the Mott density previously determined by photoluminescence and terahertz spectroscopy measurements and theoretical calculations. Keywords: Exciton, Semiconductor, Ultrafast pump-probe spectroscopy |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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