| Autor: |
R.-M. Neubieser, J.-L. Wree, J. Jagosz, M. Becher, A. Ostendorf, A. Devi, C. Bock, M. Michel, A. Grabmaier |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Micro and Nano Engineering, Vol 15, Iss , Pp 100126- (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2590-0072 |
| DOI: |
10.1016/j.mne.2022.100126 |
| Popis: |
The unique electronic and mechanical properties of transition metal dichalcogenides (TMDs) make them interesting for industry and research as the demand for two-dimensional (2D) material applications has been increased in the last decade. Most applications make use of the characteristic optical properties of the crystalline material. In this study, a low-temperature atomic layer deposition (ALD) process for layer-by-layer generation on 200 mm wafers is introduced. The deposited layers are characterized by XPS, XRD, Raman spectroscopy and AFM measurements. Four-point probe sheet resistance measurements show the high homogeneity of deposited layers. Compositional analysis reveals amorphous MoOxSy films and thickness measurements via SEM cross section and ellipsometry show a growth rate of about 0.1 nm/cycle. Further improvement of the film quality can be achieved by thermal annealing. MoS2 layers have also been found to be gas-sensitive to various gas molecules. For this application high crystallinity is not necessarily required and hence, this low-temperature wafer-scale process for 2D gas sensors can be integrated into already existing workflows for high-volume production on silicon wafers. Furthermore, it can also be applied on different substrates, for example on flexible thin glasses. The possible implementation to these substrates is also shown. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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