Computation of the Spatial Distribution of Charge-Carrier Density in Disordered Media

Autor:	Alexey V. Nenashev, Florian Gebhard, Klaus Meerholz, Sergei D. Baranovskii
Jazyk:	angličtina
Rok vydání:	2024
Předmět:	disordered materials electron states in random potential Science Astrophysics QB460-466 Physics QC1-999
Zdroj:	Entropy, Vol 26, Iss 5, p 356 (2024)
Druh dokumentu:	article
ISSN:	1099-4300
DOI:	10.3390/e26050356
Popis:	The space- and temperature-dependent electron distribution n(r,T) determines optoelectronic properties of disordered semiconductors. It is a challenging task to get access to n(r,T) in random potentials, while avoiding the time-consuming numerical solution of the Schrödinger equation. We present several numerical techniques targeted to fulfill this task. For a degenerate system with Fermi statistics, a numerical approach based on a matrix inversion and one based on a system of linear equations are developed. For a non-degenerate system with Boltzmann statistics, a numerical technique based on a universal low-pass filter and one based on random wave functions are introduced. The high accuracy of the approximate calculations are checked by comparison with the exact quantum-mechanical solutions.
Databáze:	Directory of Open Access Journals
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