Purely antiferromagnetic magnetoelectric random access memory

Autor: Tobias Kosub, Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G. Schmidt, Denys Makarov
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/ncomms13985
Popis: Magnetoelectric coupling allows switching of magnetic states via gate voltage pulses. Here the authors propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory based on Cr2O3, reporting 50-fold reduction of writing threshold compared to ferromagnetic counterparts.
Databáze: Directory of Open Access Journals