High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

Autor: Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Kazuya Terabe, Shinichi Takagi, Mitsuru Takenaka
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Communications Materials, Vol 1, Iss 1, Pp 1-9 (2020)
Druh dokumentu: article
ISSN: 2662-4443
DOI: 10.1038/s43246-020-00103-0
Popis: MoS2 is a promising two-dimensional material for optoelectronics. Here, MoS2 phototransistors with a dual-functioning HfO2 dielectric and charge-trapping layer achieve a responsivity of 1.1×106, due to an enhanced photogating effect from band edge alignment with oxygen vacancies.
Databáze: Directory of Open Access Journals