| Autor: |
Mihovil Bosnar, Alexandra Yu. Vyazovskaya, Evgeniy K. Petrov, Evgueni V. Chulkov, Mikhail M. Otrokov |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-8 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2397-7132 |
| DOI: |
10.1038/s41699-023-00396-y |
| Popis: |
Abstract Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as S x y = C e 2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance S x y = C e 2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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