Influence of radiation on the electrophysical parameters of GaAsP LEDs
| Autor: | R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. G. Litovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko |
|---|---|
| Jazyk: | English<br />Russian<br />Ukrainian |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Âderna Fìzika ta Energetika, Vol 22, Iss 1, Pp 56-61 (2021) |
| Druh dokumentu: | article |
| ISSN: | 1818-331X 2074-0565 |
| DOI: | 10.15407/jnpae2021.01.056 |
| Popis: | The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|