| Autor: |
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 408-412 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3179465 |
| Popis: |
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of $1.7 \times 10^{7}$ . The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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