| Autor: |
Xiaoli Ji, Baiqing Liu, Hengjing Tang, Xuelin Yang, Xue Li, HaiMei Gong, Bo Shen, Ping Han, Feng Yan |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 4, Iss 8, Pp 087135-087135-7 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4894142 |
| Popis: |
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at Ec - 0.25 eV in the absorption layer. Using the trap parameters, a dark current model is constructed and the device simulation generates the dark current characteristic which agrees well with the experimental data. The model suggests that the dark current at low reverse voltage is dominated by the Shockley-Read-Hall (SRH) and trap-assisted tunneling (TAT). Furthermore, it predicts some basic rules for suppressing the dark current in 2.6 μm InGaAs detectors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
