A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

Autor:	A. El Abbassi, Y. Amhouche, K. Raïs, R. Rmaily
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	MOSFET Velocity saturation Pinch off Conductance Charge. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 24, Iss 1, Pp 23-29 (2001)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2001/34065
Popis:	In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristic Id(Vg) and compared with the experimental characteristic Id(Vd).
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/2b6fbb039fa24788be5d1601f0b31a95 Zobrazit plný text záznamu Plný text View record in DOAJ