| Autor: |
Jiawei Mao, Hiromu Sato, Guo-Wei Lu, Shiyoshi Yokoyama |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
APL Photonics, Vol 7, Iss 12, Pp 126103-126103-7 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2378-0967 |
| DOI: |
10.1063/5.0109251 |
| Popis: |
Integrated lithium niobate (LN) electro-optic (EO) modulators are emerging for applications in next-generation optical fiber communication networks. To date, LN crystal waveguides have led the technology for high-speed modulators. On the other hand, on-chip LN modulators are expected to realize scalable signaling devices with mature complementary metal–oxide–semiconductor technology. In this study, a silicon-loaded LN modulator on the insulator substrate featuring a small footprint, a low driving voltage, and high-speed EO modulation is designed and fabricated. No etching or patterning of the LN is required. The measured halfwave-voltage length product is 1.9 V cm with a static modulation extinction ratio of 17.9 dB. The fabricated LN modulator has a modulation bandwidth of 60 GHz and supports high-speed signaling at a data rate up to 200 Gbit/s. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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