Autor: |
Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee |
Jazyk: |
angličtina |
Rok vydání: |
2018 |
Předmět: |
|
Zdroj: |
Nanomaterials, Vol 8, Iss 10, p 797 (2018) |
Druh dokumentu: |
article |
ISSN: |
2079-4991 |
DOI: |
10.3390/nano8100797 |
Popis: |
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
|