| Autor: |
Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Nanomaterials, Vol 8, Iss 10, p 797 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano8100797 |
| Popis: |
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
