Autor: |
Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers |
Jazyk: |
angličtina |
Rok vydání: |
2022 |
Předmět: |
|
Zdroj: |
Light: Science & Applications, Vol 11, Iss 1, Pp 1-8 (2022) |
Druh dokumentu: |
article |
ISSN: |
2047-7538 |
DOI: |
10.1038/s41377-022-00982-7 |
Popis: |
Abstract Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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