Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Autor: Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Light: Science & Applications, Vol 11, Iss 1, Pp 1-8 (2022)
Druh dokumentu: article
ISSN: 2047-7538
DOI: 10.1038/s41377-022-00982-7
Popis: Abstract Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
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