| Autor: |
Y. Song, F. Kawamura, K. Shimamura, T. Ohgaki, N. Ohashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 11, Pp 115011-115011-6 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0025736 |
| Popis: |
In this study, we developed a novel growth method named “Flux-Film-Coated (FFC) sputtering.” In this method, nitrogen radicals were supplied to the Al–Sn flux at around 600 °C followed by the deposition of an Al–Sn metal film on a sapphire substrate as flux, which resulted in the growth of high-quality AlN films. The nitrogen radical, which is the source of nitrogen for the growth of AlN, was generated by the radio frequency plasma in a nitrogen atmosphere. Using a zirconia target in the plasma generation process, nitrogen radicals were easily generated because the zirconia was not etched in a pure nitrogen atmosphere, which enabled us to fabricate the AlN film using the flux method in the sputtering chamber in a single step. The crystallinity of the synthesized AlN determined using the FFC-sputtering method was remarkably improved when compared with that of the AlN film deposited using the reactive sputtering method. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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