| Autor: |
Haglund R. F., Marvel R. E., Hontani Y., Hada M., Matsuo J. |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
EPJ Web of Conferences, Vol 41, p 03005 (2013) |
| Druh dokumentu: |
article |
| ISSN: |
2100-014X |
| DOI: |
10.1051/epjconf/20134103005 |
| Popis: |
The Au/Cr/VO2/Si system was investigated in pump–probe experiments. Hot-electrons generated in the Au were found to penetrate into the underlying VO2 and couple with its lattice inducing a semiconductor-to-metal phase transition in ~2 picoseconds. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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