Terahertz light-emitting graphene-channel transistor toward single-mode lasing
| Autor: | Yadav Deepika, Tamamushi Gen, Watanabe Takayuki, Mitsushio Junki, Tobah Youssef, Sugawara Kenta, Dubinov Alexander A., Satou Akira, Ryzhii Maxim, Ryzhii Victor, Otsuji Taiichi |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Nanophotonics, Vol 7, Iss 4, Pp 741-752 (2018) |
| Druh dokumentu: | article |
| ISSN: | 2192-8606 2192-8614 2017-0106 |
| DOI: | 10.1515/nanoph-2017-0106 |
| Popis: | A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature. |
| Databáze: | Directory of Open Access Journals |
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