Surface Recombination Via Interface Defects in Field Effect Transistors

Autor:	E. Bendada, K. Raïs, P. Mialhe, J. P. Charles
Jazyk:	angličtina
Rok vydání:	1998
Předmět:	Recombination current oxide semiconductor energy level. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 21, Iss 1, Pp 61-71 (1998)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/1998/91648
Popis:	Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe the effect of energy level of bulk recombination centers on the values of reverse recombination current.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/c1cba72e58b24df7a23a9ed8704114cd Zobrazit plný text záznamu Plný text View record in DOAJ