Linear I-V Characteristics of Highly-doped SOI p-i-n Diode for Low Temperature Measurement
| Autor: | Anak Agung Ngurah Gde Sapteka, Hoang Nhat Tan, Ryosuke Unno, Daniel Moraru, Arief Udhiarto, Sri Purwiyanti, Michiharu Tabe, Djoko Hartanto, Harry Sudibyo |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | International Journal of Technology, Vol 6, Iss 3, Pp 318-326 (2015) |
| Druh dokumentu: | article |
| ISSN: | 2086-9614 2087-2100 |
| DOI: | 10.14716/ijtech.v6i3.1395 |
| Popis: | This report is focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin silicon-on-insulator (SOI) structures with an intrinsic layer length of 200 nm and 700 nm under a forward bias at a temperature range from 50 K to 250 K. The doping concentrations of Boron and Phosphorus in SOI p-i-n diodes are high, 1×1020 cm-3 and 2×1020 cm-3, respectively. The linearity of I-V characteristics of the p-i-n diodes under a certain forward bias voltage range and temperature range from 50 K to 250 K indicate these devices are suitable for low temperature sensing purposes. We conclude that highly-doped p-i-n diodes produce a higher current as the temperature decreases under a certain bias voltage range. Nanoscale diodes with longer and wider intrinsic layers generate higher currents under a certain range of bias voltage and low temperature measurements. |
| Databáze: | Directory of Open Access Journals |
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