Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Autor: Hongliang Chang, Zhetong Liu, Shenyuan Yang, Yaqi Gao, Jingyuan Shan, Bingyao Liu, Jingyu Sun, Zhaolong Chen, Jianchang Yan, Zhiqiang Liu, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Tongbo Wei
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Light: Science & Applications, Vol 11, Iss 1, Pp 1-12 (2022)
Druh dokumentu: article
ISSN: 2047-7538
DOI: 10.1038/s41377-022-00756-1
Popis: This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.
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