Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications

Autor:	Jong-Hwan Yoon
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	core-shell nanoparticle stacked tunneling layer nonvolatile memory charge retention Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Zdroj:	Materials, Vol 12, Iss 19, p 3111 (2019)
Druh dokumentu:	article
ISSN:	1996-1944
DOI:	10.3390/ma12193111
Popis:	Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/089a9653da014a2db6f316cfbb70e18e Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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