| Autor: |
Yunwoo Shin, Jaemin Son, Juhee Jeon, Seungho Ryu, Kyoungah Cho, Sangsig Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202300764 |
| Popis: |
Abstract In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5 mV dec−1 and an ON/OFF current ratio of ≈5 × 106 for both the n‐ and p‐channel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an ON current ratio of 1.02 for the n‐ and p‐channel modes. Moreover, the bidirectional synaptic weight updates of binarized spike‐timing‐dependent plasticity learning are successfully performed in a single transistor. This study demonstrates the potential of a triple‐gated NS transistor for achieving compact synaptic arrays in large‐scale silicon‐based neuromorphic computing systems. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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