The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers
| Autor: | Robert Mroczyński, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Telecommunications and Information Technology, Iss 3 (2023) |
| Druh dokumentu: | article |
| ISSN: | 1509-4553 1899-8852 |
| DOI: | 10.26636/jtit.2007.3.821 |
| Popis: | This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process. |
| Databáze: | Directory of Open Access Journals |
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