Diamond-defect engineering of NV- centers using ion beam irradiation
| Autor: | Toural, J. L. Sánchez, García-Pérez, J., Bernardo-Gavito, R., Granados, D., Andrino-Gómez, A., García, G., Pau, J. L., Ramos, M. A., Gordillo, N. |
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| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Diamond & Related Materials 151, 111838 (2025) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.diamond.2024.111838 |
| Popis: | The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV- centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV- and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800C (and in some cases at 900C), most samples exhibited a high density of NV0 and especially NV- centers. This demonstrates that thermal treatment is essential for vacancy-nitrogen recombination and NV- formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV- densities without graphitization, which is essential for preserving the material's properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV- center formation to enhance the sensitivity of diamond-based quantum magnetic sensors. Comment: 21 pages, 10 figures, 3 tables |
| Databáze: | arXiv |
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