Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces
| Autor: | Li, Yuchen, Chen, Zhizhong, Deng, Chuhan, Dong, Boyan, Wang, Daqi, Pan, Zuojian, Zhang, Haodong, Nie, Jingxin, Chen, Weihua, Jiao, Fei, Kang, Xiangning, Wang, Qi, Zhang, Guoyi, Shen, Bo, Liang, Wenji |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | To meet the demand for high-speed response in display applications, a more detailed study of the capacitive effects in LEDs is required. This work tested the capacitance of LEDs at different frequencies and proposed an effective capacitance model, which achieved a good fit to the frequency dispersion observed in the experimental results. Additionally, it was determined that the low-frequency 1/f capacitance originates from the metal-semiconductor interface. Comment: 9 pages, 5 figures |
| Databáze: | arXiv |
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