Tightly-bound and room-temperature-stable excitons in van der Waals degenerate-semiconductor Bi4O4SeCl2 with high charge-carrier density

Autor: Xu, Yueshan, Wang, Junjie, Su, Bo, Deng, Jun, Peng, Cao, Wu, Chunlong, Zhang, Qinghua, Gu, Lin, Luo, Jianlin, Xu, Nan, Guo, Jian-gang, Chen, Zhi-Guo
Rok vydání: 2023
Předmět:
Zdroj: Communications Materials 4, 69 (2023)
Druh dokumentu: Working Paper
DOI: 10.1038/s43246-023-00392-1
Popis: Excitons, which represent a type of quasi-particles consisting of electron-hole pairs bound by the mutual Coulomb interaction, were often observed in lowly-doped semiconductors or insulators. However, realizing excitons in the semiconductors or insulators with high charge carrier densities is a challenging task. Here, we perform infrared spectroscopy, electrical transport, ab initio calculation, and angle-resolved-photoemission spectroscopy studies of a van der Waals degenerate-semiconductor Bi4O4SeCl2. A peak-like feature (i.e., alpha peak) is present around ~ 125 meV in the optical conductivity spectra at low temperature T = 8 K and room temperature. After being excluded from the optical excitations of free carriers, interband transitions, localized states and polarons, the alpha peak is assigned as the exciton absorption. Moreover, assuming the existence of weakly-bound excitons--Wannier-type excitons in this material violates the Lyddane-Sachs-Teller relation. Besides, the exciton binding energy of ~ 375 meV, which is about an order of magnitude larger than those of conventional semiconductors, and the charge-carrier concentration of ~ 1.25 * 10^19 cm^-3, which is higher than the Mott density, further indicate that the excitons in this highly-doped system should be tightly bound. Our results pave the way for developing the optoelectronic devices based on the tightly-bound and room-temperature-stable excitons in highly-doped van der Waals degenerate semiconductors.
Comment: Accepted by Communications Materials
Databáze: arXiv
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