Non-invasive digital etching of van der Waals semiconductors
| Autor: | Zhou, Jian, Zhang, Chunchen, Shi, Li, Kim, Xiaoqing Chen Tae-Soo, Gyeon, Minseung, Wang, Jian Chen Jinlan, Kang, Linwei Yu Xinran Wang Kibum, Orgiu, Emanuele, Samorì, Paolo, Watanabe, Kenji, Taniguchi, Takashi, Tsukagoshi, Kazuhito, Wang, Peng, Shi, Yi, Li, Songlin |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Nature Communications, 13, 1844 (2022) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/s41467-022-29447-6 |
| Popis: | The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS$_2$ reaches up to $1200\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation. Comment: 46 pages, 4 figures, with SI |
| Databáze: | arXiv |
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