| Autor: |
Ganesh, N., Ashar, A. Z., Purohit, Sumukh, Narasimhan, K. L., Narayan, K. S. |
| Rok vydání: |
2022 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevApplied.17.024060 |
| Popis: |
The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devices. The device operation is studied with inter-electrode lengths varying from 4 {\mu}m to 120 {\mu}m. Device characteristics indicate distinct ohmic and space-charge limited current (SCLC) regimes that are controlled by the inter-electrode length and applied bias. The electric-potential mapping using Kelvin-Probe microscopy across the device indicates minimal ion-screening effects and the presence of a transport barrier at the metal-MAPbI3 junction. Further, photocurrent imaging of the channel using near-field excitation-scanning microscopy reveals dominant recombination and charge-separation zones. These lateral devices exhibit photodetector characteristics with a responsivity of about 51 mA/W in self-powered mode and 5.2 A/W at 5 V bias, in short-channel devices (4 {\mu}m). The low device capacitance enables a fast light-switching response of ~12 ns. |
| Databáze: |
arXiv |
| Externí odkaz: |
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