Beyond 300Gbps Silicon Microring Modulator with AI Acceleration
| Autor: | Hu, Fangchen, Zhang, Yuguang, Zhang, Hongguang, Li, Zhongya, Xing, Sizhe, Shi, Jianyang, Zhang, Junwen, Xiao, Xi, Chi, Nan, He, Zhixue, Yu, Shaohua |
|---|---|
| Rok vydání: | 2021 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Silicon microring modulator (Si-MRM) has become one of the most promising compact modulators to meet the increasing capacity requirements of the next generation optical interconnection. The limited electro-optical (E-O) bandwidth, low modulation efficiency, and inherent modulation nonlinearity are the major factors that limit the Si-MRM modulation speed. To address these issues, we comprehensively optimize the Si-MRM from the device to the modulation and the signal processing. Large modulation bandwidth over 67GHz is achieved in our newly fabricated Si-MRM. Additionally, the laser wavelength and bias voltage of Si-MRM are optimized to significantly improve the modulation performance. Finally, we comprehensively study the theoretical model of modulation nonlinearity in Si-MRM, especially transient nonlinearity. A bidirectional gate recurrent unit (Bi-GRU) neural network with minor modification is applied to compensate for the nonlinear impairments. With all these efforts, we experimentally demonstrate a 302 Gbps Si-MRM-based O-band optical interconnection and achieve 300 Gbps transmission over a 1-km standard single-mode fiber using the discrete multitone modulation format with bit and power loading (BPL-DMT). Comment: 15 pages,7 figures, Journal paper, submitted to Nature Communication |
| Databáze: | arXiv |
| Externí odkaz: |
|