Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model
| Autor: | Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg |
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| Rok vydání: | 2019 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/1367-2630/ab306f |
| Popis: | We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$-valley and $\Gamma$-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$$\cdot$$p$ model and relevant input parameters successfully applied to relaxed and strained Ge$_{1-x}$Sn$_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy. Comment: 8-pages, 6 figures |
| Databáze: | arXiv |
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