| Autor: |
Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, Stemmer, Susanne |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Physical Review Materials 3, 031201(R) (2019) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevMaterials.3.031201 |
| Popis: |
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm2/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase. |
| Databáze: |
arXiv |
| Externí odkaz: |
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