Uniaxial Strain Effects on Graphene Nanoribbon Resonant Tunneling Transistors

Autor:	Akbari, Mahmood, Baghai-Wadji, Alireza, Morad, Razieh
Rok vydání:	2018
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	The effect of the uniaxial strain on the current-voltage characteristic of a typical armchair graphene-nanoribbon-hBN heterostructure device is simulated numerically by employing the nearest-neighbor tight-binding model and the non-equilibrium Green's function formalism. Simulations clearly reveal the following notable dependencies: (i) the strain invariably reduces the current; (ii) the strain applied in the armchair direction markedly widens the main peak of the current over a larger region of the bias voltage compared with the unstrained state; (iii) the current decreases faster when the strain is applied in the armchair rather than the zigzag direction. Comment: 5 pages, 6 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1812.09524 Zobrazit plný text záznamu View this record from Arxiv