High-speed and high-responsivity hybrid silicon/black-phosphorus waveguide photodetectors at 2 {\mu}m
| Autor: | Yin, Yanlong, Cao, Rui, Guo, Jingshu, Liu, Chaoyue, Li, Jiang, Feng, Xianglian, Wang, Huide, Du, Wei, Qadir, Akeel, Zhang, Han, Ma, Yungui, Gao, Shiming, Xu, Yang, Shi, Yaocheng, Tong, Limin, Dai, Daoxin |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 {\mu}m by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of ~2 {\mu}m or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (~40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2{\mu}m. Comment: 20 pages, 13 figures, 2 tables |
| Databáze: | arXiv |
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